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2023-11-27


Ti:SAPPHIRE LASER CRYSTAL


Titanium-doped sapphire (Ti3+:Al2O3) has a very large gain bandwidth (670-1070 nm) in combination with excellent thermal conductivity and is used for ultrashort pulse generation and widely wavelength-tunable lasers.

The absorption and emission spectra of Ti:Sapphire crystal are shown in Fig.1., and the basic spectroscopic and thermomechanical properties are summarized in Table 1.

Fig. 1. Absorption and emission spectra of Ti:Sapphire

Fig. 1. Absorption and emission spectra of Ti:Sapphire


IMG 1. Examples of Ti:Sapphire crystal blanks

IMG 1. Examples of Ti:Sapphire crystal blanks


PUMPING SOURCES FOR Ti:SAPPHIRE LASERS


Pumping sources for Ti:Sapphire lasers include frequency-doubled diode-pumped Nd lasers, frequency-doubled fiber lasers and optically pumped semiconductor lasers (OPSL). The development of high-power InGaN-based semiconductor diode lasers has opened new possibilities for pumping Ti:Sapphire lasers. InGaN diode lasers can greatly reduce the complexity, size, and cost of Ti:Sapphire systems. Guidance on optimizing designs for InGaN diode-pumped Ti:Sapphire lasers can be found in reference [1], which considers some unexpected behavior, particularly with 450 nm pumping.

 

FEATURES OF Ti:SAPPHIRE LASER CRYSTALS FROM OPTOGAMA


  • Titanium doping is from 0,05 to 0,3 at. %;
  • Absorption coefficient is from 0,2 to 7,5 cm-1@532 nm (E//c axis);
  • FOM is from 150 (for high doped material) to >200 (for low doping material). The boule is annealed under strongly reducing atmosphere to achieve good balance between Ti3+ and Ti4+ ions;
  • We have option to use corrective MRF polishing technique to improve transmitted wavefront distortion to <λ/4@632,8 nm;
  • The standard surface quality is 10-5 S-D, controlling precise dimensional tolerances;
  • Large size up to 110 x 110 x 40 mm.


ANTIREFLECTION COATINGS

  • Narrow band and broadband designs;
  • Coating design and deposition technique are adopted for vacuum and cryogenic temperature environment;
  • Laser induced damage threshold:

>7 J/cm2 @ 532 nm; 5 ns; 10 Hz;

>2 J/cm2 @ 800 nm; 300 ps; 10 Hz.

IMG 2. Broadband coating

IMG 2. Broadband coating


IMG 3. Interferogram of large 50x50mm Ti:Sapphire crystal flatness

IMG 3. Interferogram of large 50x50mm Ti:Sapphire crystal flatness

IMG 4. Surface roughness (<1Å PV) measurement result of our standard o6 x 20 mm crystal

IMG 4. Surface roughness (<1Å PV) measurement result of our standard o6 x 20 mm crystal



References

  • PETER F. MOULTON, JEFFREY G. CEDERBERG, KEVIN T. STEVENS, GREG FOUNDOS, MICHAL KOSELJA, AND JANA PRECLIKOVA4 „Optimized InGaN-diode pumping of Ti:Sapphire crystals“, Optical Materials Express, 2019, Vol.9, No 5, PP.2131-2146.



Contacts

E-mail: [email protected]    Phone: +370 5 219 4884    Fax: +370 5 219 4883


Download PDF: White Papaer on Ti:Sapphire by Optogama